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| MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N TAB#110 t=0.5 P S R T E2 G2 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DU-12H is a 600V (VCES), 100 Ampere Dual IGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 3.7 3.150.01 1.89 0.94 0.28 0.67 0.91 0.91 0.43 0.71 0.16 Millimeters 94.0 80.00.25 48.0 24.0 7.0 17.0 23.0 23.0 11.0 18.0 4.0 Dimensions M N O P Q R S T U V Inches 0.47 0.53 0.1 0.63 0.98 Millimeters 12.0 13.5 2.5 16.0 25.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 0.3 0.83 0.16 0.51 7.5 21.2 4.0 13.0 Sep.1998 21 MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM100DU-12H -40 to 150 -40 to 125 600 20 100 200* 100 200* 400 2.5~3.5 3.5~4.5 310 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts N*m N*m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25C IC = 100A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.4 2.6 200 - Max. 1 0.5 7.5 3.0 - - 2.6 Units mA A Volts Volts Volts nC Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V, RG = 6.3, Resistive Load Switching Operation IE = 100A, diE/dt = -200A/s IE = 100A, diE/dt = -200A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.24 Max. 8.8 4.8 1.3 100 250 200 300 160 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.035 Max. 0.31 0.7 - Units C/W C/W C/W Sep.1998 MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 160 15 13 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 200 14 COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 4 3 2 1 12 120 11 120 80 10 80 40 0 40 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 40 80 120 160 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 0V 8 6 4 2 IC = 200A EMITTER CURRENT, IE, (AMPERES) 101 Cies IC = 100A 102 100 Coes 10-1 Cres IC = 40A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10-2 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -200A/sec Tj = 25C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 300V VGE = 15V RG = 6.3 Tj = 125C td(off) tf 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 100A 16 12 8 4 SWITCHING TIME, (ns) VCC = 200V VCC = 300V 102 td(on) 102 trr Irr 101 101 tr 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 50 100 150 200 250 300 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.31C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.7C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998 24 |
Price & Availability of CM100DU-12H
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